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Preliminary Program of GADEST 2009
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Saturday - Sunday - Monday - Tuesday - Wednesday - Thursday - Friday - Poster Session 1 - Poster Session 2

Saturday (September 26, 2009)
Arrival at Hotel Döllnsee-Schorfheide
16:00 Registration start
19:00 – 23:00 Get-together party
Sunday (September 27, 2009)
09:00 – 09:20 Opening
Plenary Session
Session chair: H. Grimmeiss
09:20 – 10:10 Electrical and optical properties of dislocations in Si
V. Kveder (invited)
10:10 – 11:00 Dislocation nucleation in heteroepitaxial semiconducting films
B. Pichaud (invited), N. Burle, M. Texier, C. Fontaine and V. Vdovin
11:00 – 11:20
11:20 – 12:10 Numerical analysis of mc-Si crystal growth
K. Kakimoto (invited), H. Matsuo, S. Hisamatsu, B. Ganesh, G. Bing, X.J. Chen, L. Liu, H. Miyazawa and Y. Kangawa
12:10 – 14:00
Session chair: H. Richter
14:00 – 14:50 Trends in photovoltaics
P. Fath (invited)
Session: Point Defects and Oxygen
14:50 – 15:10 Properties of fast-diffusing oxygen species in silicon deduced from the generation kinetics of thermal donors
V.V. Voronkov, G.I. Voronkova, A.V. Batunina, V.N. Golovina, R. Falster, M. Cornara, N.B. Tiurina and A.S. Guliaeva
15:10 – 15:30 Oxygen precipitation in conventional and nitrogen co-doped heavily arsenic- doped Czochralski silicon crystals: Ostwald ripening
X. Ma, Y. Feng, Y. Zeng and D. Yang
15:30 – 15:50 The role of the interstitial oxygen in the recovery and evolution of the boron implantation damage
I. Mica, M.L. Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli and
S. Speranza
15:50 – 16:20
Session chair: A. Cavallini
16:20 – 17:00 Review of stress effects on dopant solubility in Si and SiGe layers
N.S. Bennett, C. Ahn, N.E.B. Cowern and P. Pichler (invited)
17:00 – 17:20 Rate equation modeling, ab initio calculation, and high sensitive FTIR investigations of the early stages of oxide precipitation in vacancy-rich CZ silicon
G. Kissinger, J. Dabrowski, V. Akhmetov, A. Sattler, D. Kot and W. von Ammon
17:20 – 17:40 Low-temperature elastic softening due to vacancies in B-doped FZ Si crystals
H. Yamada-Kaneta, H. Watanabe, Y. Nagai, S. Baba, M. Akatsu, Y. Nemoto and T. Goto
17:40 – 18:00 Oxygen diffusion in Si1-xGex alloys
L.I. Khirunenko, Y.V. Pomozov, M.G. Sosnin, A.V. Duvanskii, S.K. Golyk, N.V. Abrosimov and
H. Riemann
18:00 – 19:30
Poster Session 1
19:30 – open end
Monday (September 28, 2009)
Session: Photovoltaic Silicon and Defects
Session chair: W. Koch
08:30 – 09:10 Influence of defects on solar cell characteristics
O. Breitenstein (invited), J. Bauer, P. P. Altermatt and K. Ramspeck
09:10 – 09:50 Dislocation engineering in multi-crystalline silicon
M. Bertoni (invited), C. Colin and T. Bounassisi
09:50 – 10:10 Analysis of heterogeneous iron precipitation in mc-Si
A. Haarahiltunen, V. Vähänissi, M. Yli-Koski, H. Talvitie and H. Savin
10:10 – 10:30 Photovoltaic-quality silicon epitaxy by hot-wire CVD at glass-compatible temperatures
C.W. Teplin, I.T. Martin, M. Shub, R.C. Reedy, K.M. Jones, M.J. Romero, P. Stradins and
H.M. Branz
10:30 – 10:50
Session chair: E. Weber
10:50 – 11:30 Multi-crystalline Si wafers for solar cells
Y. Wan (invited)
11:30 – 12:10 Conduction mechanisms in doped and undoped nc-Si for PV
A. Cavallini (invited)
12:10 – 14:00
Session: Hydrogen and Defect Passivation in Si
Session chair: T. Buonassisi
14:00 – 14:40 Hydrogenation in crystalline silicon materials for photovoltaic application
G. Hahn (invited), M. Käs and B. Herzog
14:40 – 15:00 Hydrogen effects in Si substrates for solar cells
A. Ulyashin
15:00 – 15:20 EBIC investigation of the influence of hydrogen passivation on thin-film polycrystalline silicon solar cells obtained by aluminium induced crystallization and epitaxy
D. Van Gestel, I. Gordon and J. Poortmans
15:20 – 15:40 Influence of hydrogen on the structural stability of annealed ultrathin
Si/Ge amorphous layers

C. Frigeri, L. Nasi, M. Serényi, A. Csik, Z. Erdélyi and D. L. Beke
15:40 – 16:10
Session: Defect Engineering and Gettering
Session chair: D. Yang
16:10 – 16:30 Iron gettering in CZ silicon during the industrial solar cell process
A. Laades, K. Lauer, C. Maier, D. Alber, M. Bähr, J. Nutsch, J. Lossen and A. Lawerenz
16:30 – 16:50 Trans-RP gettering and out-diffusion of oxygen implanted into highly B-doped silicon
R. Kögler, Ch. Debois, J.W. Gerlach, H. Hutter, A. Mücklich and W. Skorupa
16:50 – 17:10 Effect of oxygen in low temperature boron and phosphorus diffusion gettering of iron in Czochralski-grown silicon
V. Vähänissi, A. Haarahiltunen, H. Talvitie, M.I. Asghar, M. Yli-Koski and H. Savin
17:10 – 17:30 Gettering efficiency of Si (110)/(100) directly bonded hybrid crystal orientation substrates
T. Aoki, H. Kariyazaki, K. Sueoka and K. Izunome
17:30 – 17:50 The production of vacancy-oxygen defects in electron-irradiated Cz-Si initially treated at high temperatures and high pressures
A. Andrianakis, C.A. Londos, A. Misiuk, V.V. Emtsev, G.A. Oganesyan and H. Ohyama
18:00 – 19:30
Poster Session 1
19:30 – open end
Tuesday (September 29, 2009)
Session: Si-based Photonics and Defect Luminescence
Session chair: N. Sobolev
08:30 – 09:10 Silicon periodic structures and their liquid crystal composites
E.V. Astrova (invited), V.A. Tolmachev, Yu.A. Zharova, G.V. Fedulova, A.V. Baldycheva and
T.S. Perova
09:10 – 09:30 Dependence of luminescence properties of bonded Si wafers on surface twist angle
E.A. Steinman, O. Kononchuk, A.N. Tereshchenko and A.A. Mazilkin
09:30 – 09:50 D-line emission from small angle grain boundaries in multicrystalline Si
T. Sekiguchi, W. Lee, J. Chen and B. Chen
09:50 – 10:10 Determination of the origin of dislocation related luminescence from silicon using regular dislocation networks
T. Mchedlidze, O. Kononchuk, T. Arguirov, M. Trushin, M. Reiche and M. Kittler
10:10 – 10:30
Session chair: V. Kveder
10:30 – 10:50 Structural and luminescent properties of implanted silicon layers with dislocation-related luminescence
N.A. Sobolev, Kalyadin, R.N. Kyutt, E.I. Shek and V.I. Vdovin
10:50 – 11:10 Optimization of the luminescence properties of silicon diodes produced by implantation and annealing
T. Arguirov, T. Mchedlidze, M. Reiche and M. Kittler
11:20 – 12:20
Excursion to Berlin
12:30 Departure to excursion
19:00 Expected time of arrival from Berlin
19:00 – 20:30
Poster Session 2
20:30 – open end
Wednesday (September 30, 2009)
Session: Advanced Semiconductor Materials and Devices
Session chair: V. Litovchenko
09:10 – 09:50 Advanced Si-based semiconductors for energy and photonic applications
J. Kouvetakis (invited), J. Menendez and J. Tolle
09:50 – 10:30 Strained silicon devices
M. Reiche (invited), O. Mountanabbir, J. Hoentschel, U. Gösele, S. Flachowsky and
M. Horstmann
10:30 – 10:50
Session chair: G. Rozgonyi
10:50 – 11:30 Novel trends in SOI technology for CMOS applications
O. Kononchuk (invited), D. Landru and C. Veytizou
11:30 – 11:50 Si wafer bonding: Structural features of the interface
V.I. Vdovin, N.D. Zakharov, E. Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist and R. Falster
11:50 – 12:10 Semi-insulating silicon for microwave devices
D.M. Jordan, K. Mallik, R.J. Falster and P.R. Wilshaw
12:10 – 14:00
Session: Modeling
Session chair: P. Pichler
14:00 – 14:20 Optimization of silicon ingot quality by the numerical prediction of bulk crystal defects
F. Loix, F. Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert and V. Regnier
14:20 – 14:40 Simulation of iron distribution after crystallization of mc-silicon
J. Schön, H. Habenicht, M.C. Schubert and W. Warta
14:40 – 15:00 Modeling of dislocations in Ge/Si nanostructures by finite element method
R. Gatti, F. Boioli, A. Marzegalli, F. Montalenti and L. Miglio
15:00 – 15:20 Atomistic simulation of recrystallization of amorphous Si, Ge and SiGe
M. Posselt and A. Gabriel
15:20 – 15:40 Ab initio study of hydrogenated defects and platelets models in hydrogen implanted Si
L. Bilteau, A. Tauzin and J.-P. Crocombette
15:40 – 16:00 Molecular simulation on interfacial structure and gettering efficiency of Si (110)/(100) directly bonded hybrid crystal orientation substrates
H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka
16:00 – 16:30
Session: Defect and Impurity Characterization I
Session chair: T. Sekiguchi
16:30 – 17:10 Synchrotron microscopy and spectroscopy for analysis of solar Si
W. Seifert (invited), O. Vyvenko, T. Arguirov, M. Trushin and M. Kittler
17:10 – 17:30 Quantitative iron concentration imaging
M.C. Schubert, H. Habenicht, M.J. Kerler and W. Warta
17:30 – 17:50 Divacancy-oxygen and trivacancy-oxygen complexes in silicon: Local vibrational mode studies
L.I. Murin, B.G. Svensson , J.L. Lindström, V.P. Markevich and C.A. Londos
18:00 – 19:30
Poster Session 2
19:30 – open end
Thursday (October 01, 2009)
Session: Impurity Engineering and Radiation-Induced Defects
Session chair: O. Kononchuk
09:00 – 09:40 Can impurities be beneficial to photovoltaics?
A. Luque (invited) and A. Marí
09:40 – 10:20 Impurity engineering of Czochralski silicon
J. Chen, X. Ma and D. Yang (invited)
10:20 – 10:40 Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene
S. Sonde, F. Giannazzo, V. Raineri, S. Di Franco, A. Marino and E. Rimini
10:40 – 11:00
Session chair: V. Raineri
11:00 – 11:20 Formation of radiation-induced defects in Si crystals irradiated with electrons at elevated temperatures
V.P. Markevich, A.R. Peaker, S.B. Lastovskii, V.E. Gusakov, I.F. Medvedeva and L.I. Murin
11:20 – 11:40 Accumulation of hydrogen within implantation-damaged areas in processed Si:N and Si:O
A. Misiuk, A. Ulyashin, A. Barcz and P. Formanek
11:40 – 12:00 Anisotropic strain - Anisotropic heating engineering for Si nanocrystals in SiO2
I.V. Antonova, D.V. Marin, V.A.Volodin, V.A. Skuratov, J. Jedrzejewski and I. Balberg
12:00 – 14:00
Session chair: B. Pichaud
14:00 – 14:20 Co-precipitation of copper and nickel in crystalline Si under copper- and nickel- rich conditions
C. Rudolf, P. Saring, L. Stolze and M. Seibt
14:20 – 14:40 Radiation defects in silicon: Effect of contamination by platinum atoms
P. Hazdra and V. Komarnitskyy
Session: Defect and Impurity Characterization II
14:40 – 15:20 Grain boundaries in multicrystalline Si
J. Chen (invited), B. Chen, W. Lee, M. Fukuzawa, M. Yamada and T. Sekiguchi
15:20 – 15:50
Session chair: L. Fabry
15:50 – 16:10 Electronic states of oxygen-free dislocation networks produced by direct bonding of silicon wafers
M. Trushin, O. Vyvenko, T. Mchedlidze, O. Kononchuk and M. Kittler
16:10 – 16:30 Correlation study of morphology, electrical activation and contact formation of ion implanted 4H-SiC
M.H. Weng, F. Roccaforte, F.Giannazzo, S. Di Franco, C. Bongiorno, E. Zanetti, A. Ruggiero,
M. Saggio and V. Raineri
16:30 – 16:50 Characterization of semiconductor films epitaxially grown on thin metal oxide buffer layers
P. Zaumseil, A. Giussani, O. Seifarth, T. Arguirov, A. Schubert and T. Schroeder
16:50 – 17:10 Comparative study of electrical and optical properties of plastically deformed Si
N. Yarykin and O. Feklisova
19:00 – open end
Friday (October 02, 2009)
Session: Nanostructures and Novel Devices
Session chair: P. Wilshaw
09:00 – 09:40 Current status of graphene transistors
M.C. Lemme (invited)
09:40 – 10:00 Theoretical study of ionized impurities in silicon nanowire MOS transistors
M. Bescond, M. Lannoo, L. Raymond and F. Michelini
10:00 – 10:20 Optical properties of Si nanowires catalyzed by arrays of gold nanoparticles with controlled diameters
G. Brönstrup, D. Lerose, M.G. Jenke, Ch. Niederberger, J. Hankache, M. Bechelany, L. Philippe,
I. Utke, J. Michler and S. Christiansen
10:20 – 10:40
Session chair: A. Luque
10:40 – 11:20 Clean energy: The case for thermoelectrics and photovoltaics
A. Boukai (invited)
11:20 – 11:40 Axial heterojunctions in Si nanowires by Pulsed Laser Deposition: Doping and Si/Ge layer stacks
B. Eisenhawer, A. Berger, D. Zhang, J. Michler and S. Christiansen
11:40 – 11:50 Closing Remarks
12:00 – 13:00
13:00 Bus departure to Berlin
POSTER SESSION 1 (Sunday and Monday)
Photovoltaic Silicon
P1 Growth of silicon carbide filaments in multicrystalline silicon for solar cells
H.J. Möller, C. Funke, J. Bauer, S. Köstner, H. Straube and O. Breitenstein
P2 Analysis of silicon carbide and silicon nitride precipitates in block cast multicrystalline silicon
M. Holla, T. Arguirov, W. Seifert and M. Kittler
P3 Investigations on the behaviour of carbon during inductive melting of multicrystalline silicon
L. Raabe, J. Ehrig, S. Würzner, O. Pätzold, M. Stelter and H.J. Möller
P4 An investigation into fracture of multi-crystalline silicon
B.R. Mansfield, D.E.J. Armstrong, P.R. Wilshaw and J.D. Murphy
P5 Hydrogen-induced passivation of grain-boundary defects in polycrystalline silicon
N.H. Nickel
P6 Bulk passivation of defects in multi-crystalline silicon solar cells by a-SiNx:H layers
E. Cornagliotti, H.F.W. Dekkers, C. Prastani, J. John, E. Van Kerschaver, J. Poortmans and
R.P. Mertens
P7 Passivation of Si surfaces investigated by in-situ photoluminescence techniques
J. Rappich, X. Zhang, D.M. Rosu, U. Schade and K. Hinrichs
P8 Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication
J. Hofstetter, J.-F. Lelièvre, C. del Cañizo and A. Luque
P9 Characterization of thin film photovoltaic material using photoluminescence and Raman spectroscopy
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova and M. Kittler
P10 Epitaxial film silicon solar cells by hot wire chemical vapor deposition below 750 C
K. Alberi, I.T. Martin, C.W. Teplin, E. Iwaniczko, Y. Xu, A. Duda, P. Stradins, S.W. Johnston,
H.R. Moutinho, H.M. Branz and D.L. Young
P11 3rd generation solar cell prototype based on chemically formed silicon nanowires: Processing, optical and photovoltaic properties
V.A. Sivakov, G. Brönstrup, A. Gawlik, A. Berger and S.H. Christiansen
P12 SEM characterization of silicon layers grown on carbon foil
S.K. Brantov, A.V. Eltzov, O.V. Feklisova and E.B. Yakimov
P13 An express method for the study of planar homogeneity of diffusion length in multicrystalline solar silicon
V. Litovchenko, A. Sarikov and A. Evtukh
Defect Aspects and Gettering
P14 Anomalous out-diffusion profiles of nitrogen in silicon
V.V. Voronkov, R. Falster and S. Senkader
P15 Growth of heavily phosphorus-doped (111) silicon crystals
F. Liu, H.P. Han, Y.M. Wang and L.Y. Tong
P16 Study of the mechanisms of oxygen precipitation in RTA annealed Cz-Si wafers
V. Litovchenko, I. Lisovskyy, M. Voitovych, A. Sarikov, S. Zlobin, V. Kladko and V. Machulin
P17 Dislocation states and deformation-induced point defects in plastically deformed germanium
S. Shevchenko and A. Tereshchenko
P18 Defect generation during plastic deformation of Si-rich Cz-grown SiGe crystals
N. Yarykin and N.V. Abrosimov
P19 Boron and phosphorus implantation induced electrically active defects in p-type silicon
J. Senawiratne, J.S. Cites, J.G. Couillard, J. Moll, C.A. Kosik Williams and P.G. Whiting
P20 Suppression of pores formation on a surface of p-Si by laser radiation
A. Medvid, P. Onufrijevs, L. Fedorenko, N.Yusupov and E. Daukšta
P21 Far-action defects formation and gettering in 6H-SiC Lely crystals irradiated by Bi
D.B. Shustov, E.V. Kolesnikova, E.V. Kalinina, V.A. Skuratov and M.V. Zamoryanskaya
P22 Evaluation criteria for efficient gettering applied for Cu and Ni impurities in Si wafers
D. Kot , G. Kissinger M. A. Schubert, A. Sattler and W. von Ammon
P23 Aluminum gettering of iron in silicon
D. Abdelbarey, V. V. Kveder, W. Schröter and M. Seibt
P24 Spatially resolved defect analysis in Cz-silicon after copper-nickel co-precipitation by virtue of light-beam-induced current measurements
P. Saring, C. Rudolf, L. Stolze, A. Falkenberg and M. Seibt
POSTER SESSION 2 (Tuesday and Wednesday)
Defect Aspects, Characterization and Modeling
P25 Delineation of microdefects in silicon substrates by chromium-free preferential etching solutions and laser scattering tomography
M. Pellowska, D. Possner, D. Kot, G. Kissinger and B.O. Kolbesen
P26 Vacancies and self-interstitials dynamics in silicon wafers
O. Caha, J. Kubena, A. Kubena and M. Meduna
P27 Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
D. Kropman, E. Mellikov, K. Lott, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, W. Skorupa,
S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov and J. Woznitsa
P28 DLTS studies of carbon related complexes in irradiated n- and p-silicon
L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, L.I. Murin and M. Moll
P29 The effect of germanium doping on the production of carbon–related defects in electron- irradiated Czochralski silicon
C.A. Londos, A. Andrianakis, D. Aliprantis, E. Sgourou, V.V. Emtsev and H. Ohyama
P30 Formation of radiation hardened SOI structures by N+ implantation in SiO2 film and subsequent
hydrogen transfer of Si layer

I.E. Tyschenko and V.P. Popov,
presented by I.V. Antonova
P31 Onset of blistering in low-dose hydrogen implanted and then hydrogen plasma treated Si: Formation of porous-like structures and layer exfoliation processes
A. Ulyashin, H. Nordmark, A. Misiuk, J. C. Walmsley and R. Holmestad
P32 Thermal optimization of Cz silicon single crystal growth
A.I. Prostomolotov, N.A. Verezub and M.G. Milvidskii
P33 Comparison of efficiency and kinetics of phosphorus-diffusion and aluminum gettering of metal impurities in silicon: A simulation study
M.A. Falkenberg, D. Abdelbarey, V.V. Kveder and M. Seibt
P34 Atomistic simulations of point defect diffusion in Si and SiGe: A powerful tool for point defect engineering
P. Pochet, D. Caliste, K. Rushchanskii, F. Lancon and T. Deutsch
P35 Effect of growth conditions and catalyst material on nanowhisker morphology: Monte Carlo simulation
A.G. Nastovjak, I.G. Neizvestny and N.L. Shwartz
presented by I.V. Antonova
P36 Versatile simulation tool and novel measurement method for electrical characterization of semiconductors
N. Schüler, T. Hahn, K. Dornich and J.R. Niklas
P37 Simulation of XBIC contrast of precipitates in Si
E.B. Yakimov
P38 Oxygen trimer in silicon: an infrared absorption study
L.I. Murin, V.P. Markevich, B.G. Svensson and J.L. Lindström
P39 In-situ observation of oxygen precipitation in silicon with high energy X-rays
H. Grillenberger and A. Magerl
P40 Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs
J. Chen, T. Sekiguchi, M. Takase, N. Fukata, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada and
T. Chikyo
P41 Investigation of the mechanical properties of thin films by bulge test
A. Hémel, T. Schenk, A. Jacques and T. Kruml
P42 Defect characterization of poly-Ge and VGF-grown Ge material
M. Holla, T. Arguirov, G. Jia, M. Kittler, Ch. Frank-Rotsch, F. Kiessling and P. Rudolph
P43 Scaling in quantum transport in silicon nano-transistors
U. Wulf and H. Richter
P44 Silicon cluster aggregation in silica layers
H.-J. Fitting, L. Fitting-Kourkoutis, R. Salh, E.V. Kolesnikova, M.V. Zamoryanskaya and
B. Schmidt
P45 Feedback effect on the self-organized nanostructures formation on silicon upon
femtosecond laser ablation

O. Varlamova, M. Ratzke and J. Reif
P46 Confinement levels in passivated SiGe/Si quantum well structures
I.V. Antonova, E.P. Neustroev, S.A. Smagulova, M.S. Kagan, P.S. Alekseev, S.K. Ray,
N. Sustersic and J. Kolodzey
P47 Structural transformations in Si nanostructures induced by swift heavy ions
G.A. Kachurin, S.G. Cherkova, D.V. Marin, A.G. Cherkov and V.A. Skuratov,
presented by I.V. Antonova
P48 Impurity doping of Si nanowires synthesized by laser
N. Fukata, M. Seoka, N. Saito, K. Sato, J. Chen, T. Sekiguchi and K. Murakami
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