IHP, Frankfurt (Oder)
  » Topics


GADEST 2009 will encourage but not limit submissions to the following topics

• Large diameter crystal growth

• Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates

• Influence of Si feedstock quality on solar cell performance

• Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge)

• Impurities in Si: oxygen, carbon, nitrogen, fluorine, metals

• Modeling and simulation of defects in Si/semiconductors

• Defect engineering in microelectronics and photovoltaics

• Gettering and hydrogen passivation

• Defect and impurity characterization (physical and electrical)

• Nanostructures and devices: nanocrystals, nanowires, quantum dots

• Silicon-based heterostructures

• Strain engineered materials

• Silicon-based photonics and photonic crystals

• Defect aspects for new devices: co-integration of Ge and III-V, graphenes, organo-silica devices